Part Number Hot Search : 
2SC2238B SMBJ5936 201VSN5 SHE124MD HSA733 PC812B 1N3701B TDA8512J
Product Description
Full Text Search
 

To Download IDT54FCT827CE Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 (R)
HIGH-PERFORMANCE CMOS BUFFERS
Integrated Device Technology, Inc.
IDT54/74FCT827A IDT54/74FCT827B IDT54/74FCT827C
FEATURES:
* Faster than AMD's Am29827 series * Equivalent to AMD's Am29827 bipolar buffers in pinout/ function, speed and output drive over full temperature and voltage supply extremes * IDT54/74FCT827A equivalent to FASTTM * IDT54/74FCT827B 35% faster than FAST * IDT54/74FCT827C 45% faster than FAST * IOL = 48mA (commercial), and 32mA (military) * Clamp diodes on all inputs for ringing suppression * CMOS power levels (1mW typ. static) * TTL input and output level compatible * CMOS output level compatible * Substantially lower input current levels than AMD's bipolar Am29800 series (5A max.) * Product available in Radiation Tolerant and Radiation Enhanced versions * Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology. The IDT54/74FCT827A/B/C 10-bit bus drivers provide high-performance bus interface buffering for wide data/ address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables for maximum control flexibility. All of the IDT54/74FCT800 high-performance interface family are designed for high-capacitance load drive capability, while providing low-capacitance bus loading at both inputs and outputs. All inputs have clamp diodes and all outputs are designed for low-capacitance bus loading in high-impedance state.
FUNCTIONAL BLOCK DIAGRAM
Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
OE1 OE2
2609 drw 01
PRODUCT SELECTOR GUIDE
10-Bit Buffer Non-inverting IDT54/74FCT827A/B/C
2609 tbl 01 The IDT logo is a registered trademark of Integrated Device Technology, Inc. FAST is a trademark of National Semiconductor Co.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
(c)1992 Integrated Device Technology, Inc.
MAY 1992
DSC-4612/2
7.20
1
IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
OE1 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 GND 1 2 3 4 P24-1 5 D24-1 6 E24-1 & 7 8 SO24-2 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 OE2
D1 D0 OE1 NC VCC Y0 Y1
LOGIC SYMBOL
INDEX
D2 D3 D4 NC D5 D6 D7
1 28 27 26 5 25 6 24 7 23 8 22 L28-1 9 21 10 20 11 19 1213 14 15 16 17 18
D8 D9 GND NC OE2 Y9 Y8
432
D0-9 Y2 Y3 Y4 NC Y5 Y6 Y7
10
10
Y0-9
OE1 OE2
2609 drw 04
2609 drw 02
2609 drw 03
DIP/CERPACK/SOIC TOP VIEW
LCC TOP VIEW
PIN DESCRIPTION
Name
I/O
FUNCTION TABLE(1)
Inputs Output DI L H X X YI L H Z Z Function Transparent Three-State
2609 tbl 03
OEI
DI YI
I
I O
Description When both are LOW, the outputs are enabled. When either one or both are HIGH, the outputs are High Z. 10-bit data input. 10-bit data output.
2609 tbl 02
OE OE1
L L H X
OE OE2
L L X H
NOTE: 1. H = HIGH, L = LOW, X = Don't Care, Z = High Impedance
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Rating Commercial VTERM(2) Terminal Voltage -0.5 to +7.0 with Respect to GND VTERM(3) Terminal Voltage -0.5 to VCC with Respect to GND TA Operating 0 to +70 Temperature TBIAS Temperature -55 to +125 Under Bias TSTG Storage -55 to +125 Temperature PT Power Dissipation 0.5 IOUT DC Output Current 120 Military -0.5 to +7.0 Unit V
CAPACITANCE (TA = +25C, f = 1.0MHz)
Symbol Parameter(1) CIN Input Capacitance COUT Output Capacitance Conditions VIN = 0V VOUT = 0V Typ. 6 8 Max. 10 12 Unit pF pF
-0.5 to VCC
V C C C W mA
-55 to +125 -65 to +135 -65 to +150 0.5 120
NOTE: 2609 tbl 05 1. This parameter is measured at characterization but not tested.
NOTES: 2609 tbl 04 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted. 2. Input and VCC terminals only. 3. Outputs and I/O terminals only.
7.20
2
IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC - 0.2V Commercial: TA = 0C to +70C, VCC = 5.0V 5%; Military: TA = -55C to +125C, VCC = 5.0V 10%
Symbol VIH VIL II H II L IOZH IOZL VIK IOS VOH Clamp Diode Voltage Short Circuit Current Output HIGH Voltage VCC = Min., IN = -18mA VCC = Max.(3) , VO = GND IOH = -300A IOH = -15mA MIL. IOH = -24mA COM'L. VOL Output LOW Voltage VCC = 3V, VIN = VLC or VHC, IOL = 300A VCC = Min. VIN = VIH or VIL IOL = 300A IOL = 32mA MIL. IOL = 48mA COM'L. VCC = 3V, VIN = VLC or VHC, IOH = -32A VCC = Min.
VIN = VIH or VIL
Parameter Input HIGH Level Input LOW Level Input HIGH Current Input LOW Current Off State (High Impedance) Output Current
Test Conditions(1) Guaranteed Logic HIGH Level Guaranteed Logic LOW Level VCC = Max. VI = VCC VI = 2.7V VI = 0.5V VI = GND VCC = Max. VO = VCC VO = 2.7V VO = 0.5V VO = GND
Min. 2.0 -- -- -- -- -- -- -- -- -- -- -75 VHC VHC 2.4 2.4 -- -- -- --
Typ.(2) -- -- -- -- -- -- -- -- -- -- -0.7 -120 VCC VCC 4.3 4.3 GND GND 0.3 0.3
Max. -- 0.8 5 5(4) -5(4) -5 10 10(4) -10(4) -10 -1.2 -- -- -- -- -- VLC VLC(4) 0.5 0.5
Unit V V
A
A
V mA V
V
NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25C ambient and maximum loading. 3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second. 4. This parameter is guaranteed but not tested.
2609 tbl 06
7.20
3
IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS VLC = 0.2V; VHC = VCC - 0.2V
Symbol ICC ICC ICCD Parameter Quiescent Power Supply Current Quiescent Power Supply Current TTL Inputs HIGH Dynamic Power Supply Current (4) Test Conditions(1) VCC = Max. VIN VHC; V IN VLC VCC = Max. VIN = 3.4V(3) VCC = Max. Outputs Open OE1 = OE2 = GND One Input Toggling 50% Duty Cycle VCC = Max. Outputs Open fi = 10MHz 50% Duty Cycle OE1 = OE2 = GND One Bit Toggling VCC = Max. Outputs Open fi = 2.5MHz 50% Duty Cycle OE1 = OE2 = GND Eight Bits Toggling Min. -- -- VIN VHC VIN VLC -- Typ.(2) 0.2 0.5 0.15 Max. 1.5 2.0 0.25 Unit mA mA mA/ MHz
IC
Total Power Supply Current (6)
VIN VHC VIN VLC (FCT) VIN = 3.4V VIN = GND VIN VHC VIN VLC (FCT) VIN = 3.4V VIN = GND
--
1.7
4.0
mA
--
2.0
5.0
--
3.2
6.5 (5)
--
5.2
14.5 (5)
NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25C ambient. 3. Per TTL driven input (VIN = 3.4V); all other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply calculations. 5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ICC DHNT + ICCD (fCP/2 + fiNi) ICC = Quiescent Current ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices) fi = Input Frequency Ni = Number of Inputs at fi All currents are in milliamps and all frequencies are in megahertz.
2609 tbl 07
7.20
4
IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
IDT54/74FCT827A Com'l. Parameter Description Conditions (1)
Min.
(2)
IDT54/74FCT827B Com'l.
(2)
IDT54/74FCT827C Com'l.
(2)
Mil.
(2)
Mil.
(2)
Mil.
(2)
Max. Min.
Max. Min.
Max. Min.
Max. Min.
Max. Min.
Max.
Unit
tPLH tPHL
Propagation Delay DI to YI
CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 5pF(3) RL = 500 CL = 50pF RL = 500
1.5
8.0
1.5
9.0
1.5
5.0
1.5
6.5
1.5
4.4
1.5
5.0
ns
1.5 15.0 1.5 12.0 1.5 23.0 1.5 9.0
1.5 17.0 1.5 13.0 1.5 25.0 1.5 9.0
1.5 13.0 1.5 8.0
1.5 14.0 1.5 9.0
1.5 10.0 1.5 7.0
1.5 11.0 1.5 8.0 ns
tPZH tPZL
Output Enable Time OEI to YI
1.5 15.0 1.5 1.5 6.0 7.0
1.5 16.0 1.5 1.5 7.0 8.0
1.5 14.0 1.5 1.5 5.7 6.0
1.5 15.0 1.5 1.5 6.7 7.0
2609 tbl 08
tPHZ tPLZ
Output Disable Time OEI to YI
ns
1.5 10.0
1.5 10.0
NOTES: 1. See test circuit and waveforms. 2. Minimum limits are guaranteed but not tested on Propagation Delays. 3. These parameters are guaranteed but not tested.
7.20
5
IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TEST CIRCUITS AND WAVEFORMS TEST CIRCUITS FOR ALL OUTPUTS
VCC 500 VIN Pulse Generator RT D.U.T. 50pF CL 500 V OUT 7.0V
SWITCH POSITION
Test Open Drain Disable Low Enable Low All Other Tests Switch Closed Open
DEFINITIONS: 2609 tbl 09 CL = Load capacitance: includes jig and probe capacitance. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator.
SET-UP, HOLD AND RELEASE TIMES
DATA INPUT t SU TIMING INPUT ASYNCHRONOUS CONTROL PRESET CLEAR ETC. SYNCHRONOUS CONTROL PRESET CLEAR CLOCK ENABLE ETC. t REM 3V 1.5V 0V 3V 1.5V 0V tH 3V 1.5V 0V 3V 1.5V 0V
PULSE WIDTH
LOW-HIGH-LOW PULSE tW HIGH-LOW-HIGH PULSE
1.5V
1.5V
t SU
tH
PROPAGATION DELAY
3V 1.5V tPLH OUTPUT t PLH OPPOSITE PHASE INPUT TRANSITION tPHL 3V 1.5V 0V t PHL 0V VOH 1.5V VOL
ENABLE AND DISABLE TIMES
ENABLE CONTROL INPUT t PZL OUTPUT NORMALLY SWITCH LOW CLOSED t PZH OUTPUT SWITCH NORMALLY OPEN HIGH 3.5V 1.5V 0.3V t PHZ 0.3V 1.5V 0V V OH 0V t PLZ DISABLE 3V 1.5V 0V 3.5V V OL
SAME PHASE INPUT TRANSITION
NOTES 2609 drw 11 1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH. 2. Pulse Generator for All Pulses: Rate 1.0 MHz; ZO 50; tF 2.5ns; tR 2.5ns.
7.20
6
IDT54/74FCT827A/B/C HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ORDERING INFORMATION
IDTXXFCT XX Device Type X Package X Process Blank B P D E L SO Commercial MIL-STD-883, Class B Plastic DIP CERDIP CERPACK Leadless Chip Carrier Small Outline IC
827A 827B 827C 54 74
Non-Inverting 10-Bit Buffer Fast Non-Inverting 10-Bit Buffer Super Fast Non-Inverting 10-Bit Buffer -55C to +125C 0C to +70C
2609 cnv* 10
7.20
7


▲Up To Search▲   

 
Price & Availability of IDT54FCT827CE

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X